Reliability and Health Management – Publications

2020

  1. Mohammad H. Hedayati; Harry C. P. Dymond ; Dawei Liu; Bernard H. Stark, Fast temperature sensing for GaN power devices using E-field probes IEEE COMPEL 2020 (Accepted)
  2. N. Agbo, J. Ortiz Gonzalez, R. Wu, S. Jahdi and O Alatise, “UIS performance and ruggedness of stand-alone and cascode SiC JFETs” Microelectronics Reliability, 2020 (Accepted).
  3. Gunaydin, S. Jahdi, O. Alatise, J.A. Ortiz-Gonzalez, X. Yuan and P. Mellor, “Analysis of cyclic spontaneous switchings in GaN & SiC cascodes by snappy turn-off currents” Microelectronics Reliability, 2020 (Accepted).
  4. J-O. Gonzalez, B Etoz and O. Alatise, ” “Characterizing Threshold voltage Shifts and Recovery in Schottky gate and ohmic gate GaN High Electron Mobility Transistors (HEMTS)”, IEEE Energy Conversion Congress and Exposition (ECCE), 2020 (Accepted).
  5. J-O. Gonzalez, R Wu and O. Alatise, “Trade-offs Between Gate Oxide Protection and Performance in SiC MOSFETs”, IEEE Energy Conversion Congress and Exposition (ECCE), 2020 (Accepted).
  6. Yasin Gunaydin, Saeed Jahdi, Olayiwola Alatise, Jose Ortiz Gonzalez, Ruizhu Wu, Bernard Stark, Mohammad Hedayati, Xibo Yuan and Phil Mellor “Performance of Wide-Bandgap Gallium Nitride vs Silicon Carbide Cascode Transistors”, IEEE Energy Conversion Congress and Exposition (ECCE), 2020 (Accepted).
  7. Agbo, J-O. Gonzalez, R Wu and O. Alatise, ” Characterisation of Unclamped Inductive Switching in SiC Cascode JFETs,” 2020 IET 10th International Conference on Power Electronics, Machines and Drives (PEMD), Nottingham, UK, 2020, (Accepted).
  8. J Ortiz-Gonzalez, R. Wu, H Wu, X. Wang, V Pickert, P. Mawby and O. Alatise, ” Optimisation of the gate voltage in SiC MOSFETs: Efficiency vs reliability,” 2020 IET 10th International Conference on Power Electronics, Machines and Drives (PEMD), Nottingham, UK, 2020, (Accepted).
  9. R Wu, J Ortiz-Gonzalez and O. Alatise, ” A case study of Power Electronics in Wind Energy Conversion,” 2020 IET 10th International Conference on Power Electronics, Machines and Drives (PEMD), Nottingham, UK, 2020, (Accepted).
  10. Wang, H. Wu and V. Pickert, “Gate Threshold Voltage Measurement Method for SiC MOSFET with Current-Source Gate Driver,” 2020 IET 10th International Conference on Power Electronics, Machines and Drives (PEMD), Nottingham, UK, 2020, (Accepted).
  11. Wu, X. Wang, J. O. Gonzalez, O. Alatise and V. Pickert, “Investigation into the Switching Transient of SiC MOSFET Using Voltage and Current Source Gate Driver,” 2020 IET 10th International Conference on Power Electronics, Machines and Drives (PEMD), Nottingham, UK, 2020, (Accepted).
  12. O. Gonzalez, B Etoz and O. Alatise ” Gate stresses and threshold voltage instability in normally-OFF GaN HEMTs,” The 22nd European Conference on Power Electronics and Applications EPE’20 ECCE Europe, (Accepted).
  13. Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2020) Impact of BTI induced threshold voltage shifts in shoot-through currents from crosstalk in SiC MOSFETs. IEEE Transactions on Power Electronics . doi:10.1109/TPEL.2020.3012298 (In Press)
  14. Jahdi, M. Hedayati, B. H. Stark and P. H. Mellor, “The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation,” in IEEE Transactions on Industrial Electronics, vol. 67, no. 6, pp. 4556-4566, June 2020, doi: 10.1109/TIE.2019.2922918.
  15. Agbo, S. N., Ortiz-Gonzalez, Jose Angel and Alatise, Olayiwola M. (2020) Performance of SiC cascode JFETs under single and repetitive avalanche pulses. Microelectronics Reliability, 110 . 113644. doi:10.1016/j.microrel.2020.113644.
  16. Gonzalez, Jose Ortiz, Alatise, Olayiwola M. and Mawby, Philip. A. (2020) Non-intrusive methodologies for characterization of bias temperature instability in SiC power MOSFETs. In: 2020 IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA, 28 Apr -30 May 2020 ISBN 9781728131993. doi:10.1109/IRPS45951.2020.912963.
  17. Wu, Ruizhu, Gonzalez, Jose Ortiz, Davletzhanova, Zarina, Mawby, Philip. A. and Alatise, Olayiwola M. (2020) Fast switching SiC cascode JFETs for EV traction inverters. In: Applied Power Electronics Conference and Exposition (APEC), Annual IEEE Conference, Virtual conference, 15-19 Mar 2020. Published in: 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) pp. 3489-3496. ISBN 9781728148304. ISSN 1048-2334. doi:10.1109/APEC39645.2020.9124052 .
  18. Wang, H. Wu and V. Pickert, “A cost-efficient Current-Source Gate Driver for SiC MOSFET Module and its Comparison with Voltage-Source Gate Driver,” 2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia), Nanjing, China, 2020, (Accepted).

2019

  1. Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2019) Crosstalk in SiC power MOSFETs for evaluation of threshold voltage shift caused by bias temperature instability. In: 21st European Conference on Power Electronics and Applications – EPE’19 ECCE – EUROPE Genoa, Genoa, Italy, 2-6 Sep 2019. Published in: 2019 21st European Conference on Power Electronics and Applications (EPE ’19 ECCE Europe) ISBN 9789075815313. doi:10.23919/EPE.2019.8915508
  2. Wu, Ruizhu, Gonzalez, Jose Ortiz, Davletzhanova, Zarina, Mawby, Philip. A. and Alatise, Olayiwola M. (2019) The potential of SiC Cascode JFETs in electric vehicle traction inverters. IEEE Transactions on Transportation Electrification . p. 1. doi:10.1109/TTE.2019.2954654
  3. Ortiz Gonzalez, Jose Angel, Wu, Robert, Jahdi, S. and Alatise, Olayiwola M. (2019) Performance and reliability review of 650V and 900V silicon and SiC devices : MOSFETs, cascode JFETs and IGBTs. IEEE Transactions on Industrial Electronics . doi:10.1109/TIE.2019.2945299.
  4. Gonzalez, Jose Ortiz, Hedayati, M., Jahdi, S., Stark , B. H. and Alatise, Olayiwola M. (2019) Dynamic characterization of SiC and GaN devices with BTI stresses. Microelectronics Reliability . 113389. doi:10.1016/j.microrel.2019.06.081 .
  5. Ortiz-Gonzalez, Jose Angel , Wu, Ruizhu, Nereus Agbo, Sunday and Alatise, Olayiwola M. (2019) Robustness and reliability review of Si and SiC FET devices for more-electric-aircraft applications. Microelectronics Reliability . 113324. doi:10.1016/j.microrel. 2019.06.016.
  6. Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2019) Challenges of junction temperature sensing in SiC power MOSFETs. In: 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 – ECCE Asia), Busan, Korea (South), 27-30 May 2019 pp. 891-898.
  7. Gonzalez, Jose Ortiz, Alatise, Olayiwola M. and Mawby, Philip. A. (2019) Novel method for evaluation of negative bias temperature instability of SiC MOSFETs. Materials Science Forum, 963 . pp. 749-752. doi:10.4028/www.scientific.net/MSF.963.749.
  8. Gonzalez, Jose Ortiz, Alatise, Olayiwola M. and Mawby, Philip. A. (2019) Characterization of BTI in SiC MOSFETs using third quadrant characteristics. In: 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 19-23 May 2019. Published in: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) pp. 207-210. ISBN 9781728105802. ISSN 1946-0201. doi:10.1109/ISPSD.2019.8757624
  9. Wang, H. Wu and V. Pickert, “Design of an Advanced Programmable Current-Source Gate Driver for Dynamic Control of SiC Device,” 2019 IEEE Applied Power Electronics Conference and Exposition (APEC), Anaheim, CA, USA, 2019, pp. 1370-1374, doi: 10.1109/APEC.2019.8721941.

2018           

  1. Dalton, H. Dymond, J. Wang , M. Hedayati, D. Drury, D. Liu, and B. Stark “Stretching in Time of GaN Active Gate Driving Profiles to Adapt to Changing Load Current,” 2018 IEEE Energy Conversion Congress and Exposition (ECCE), Portland, OR, 2018, pp. 3497-3502, doi: 10.1109/ECCE.2018.8557531
  2. Jianjing Wang ; Mohammad H. Hedayati; Dawei Liu; Salah-Eddine Adami; Harry C. P. Dymond; Jeremy J. O. Dalton; Bernard H. Stark Infinity Sensor: “Infinity Sensor: Temperature Sensing in GaN Power Devices using Peak di/dt,” 2018 IEEE Energy Conversion Congress and Exposition (ECCE), Portland, OR, 2018, pp. 884-890, doi: 10.1109/ECCE.2018.8558287.
  3. Davletzhanova, Zarina, Dai, Tianxiang, Alatise, Olayiwola M., Gonzalez, Jose Ortiz, Mawby, Philip. A., Bonyadi, Roozbeh and Chan, Chun Wa (2018) Safe-operating-area of snubberless series connected silicon and SiC power devices. In: Energy Conversion Congress and Exposition, ECCE, IEEE, Portland, OR, USA, 23-27 Sep 2018. Published in: 2018 IEEE Energy Conversion Congress and Exposition (ECCE) pp. 1875-1881. ISBN 9781479973132. ISSN 2329-3748. doi:10.1109/ECCE.2018.8557402
  4. Gonzalez, Jose Ortiz and Alatise, Olayiwola M. (2018) Impact of the gate oxide reliability of SiC MOSFETs on the junction temperature estimation using temperature sensitive electrical parameters. In: 2018 IEEE Energy Conversion Congress and Exposition (ECCE), Portland, OR, USA, 23-27 Sep 2018 pp. 837-844. ISBN 9781479973125. ISSN 2329-3748. doi:10.1109/ECCE.2018.8557810
  5. Davletzhanova, Zarina, Alatise, Olayiwola M., Bonyadi, Roozbeh, Gonzalez, Jose Ortiz, Chan, Chun Wa, Bonyadi, Yeganeh, Jennings, Mike and Mawby, P. A. (Philip A.) (2018) Impact of Leakage Currents on Voltage Sharing in Series Connected SiC Power MOSFETs and Silicon IGBT Devices. In: 20th European Conference on Power Electronics and Applications, Riga, Latvia, 17-21 September 2018. Published in: 2018 20th European Conference on Power Electronics and Applications (EPE’18 ECCE Europe) ISBN 9781538641453 .
  6. Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2018) A novel non-intrusive technique for BTI characterization in SiC MOSFETs. IEEE Transactions on Power Electronics doi:10.1109/TPEL.2018.2870067
  7. Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2018) Bias temperature instability and condition monitoring in SiC power MOSFETs. Microelectronics Reliability, 88-90 . pp. 557-562. doi:10.1016/j.microrel.2018.06.045
  8. Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2018) Bias temperature instability and condition monitoring in SiC power MOSFETs. Microelectronics Reliability, 88-90 . pp. 557-562. doi:10.1016/j.microrel.2018.06.045.
  9. Davletzhanova, Z., Alatise, O., Bonyadi, R., Ortiz-Gonzalez, J., Dai, T., Jennings, M., Ran, L. and Mawby, P. (2018) A technology analysis of voltage sharing in series connected power devices. In: 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) , 20-24 May 2018 pp. 1149-1156. doi:10.23919/IPEC.2018.8507853.