“Recent Advances on Reliability and Gate Driving of WBG Power Electronics”
The Centre for Power Electronics Research Showcase addressed several of the key issues critical to the increased adoption of Wide Bandgap (WBG) Semiconductors within the growing power electronics industry.
This event was supported and organised by IMAPS UK and sponsored by Inseto Ltd.
Programme Literature
Download the Recent Advances on Reliability and Gate Driving of WBG Power Electronics (8 downloads)
Day One Conference Presentations: Monday 11 January 2021
- Gate Interface Reliability in SiC/GaN power devices – By Dr J O-Gonzalez and Prof L Alatise (University of Warwick)
- Latest Advances in Packaging/Interconnects – By Dr P Agyakwa and Prof. CM Johnson (University of Nottingham)
- High Speed Sensing and Monitoring around GaN devices – By Dr M Hedayati and Prof B Stark (University of Bristol)
Day Two Conference Presentations: Tuesday 12 January 2021
- Optimisation of switching transients for SIC MOSFETs – By Mr X Wang and Prof V Pickert (Newcastle University)
- Exploiting SiC in High Current applications – By Dr P Judge and Prof. S Finney (University of Edinburgh)
- Testing Silicon Carbide Power MOSFETs under Normal and Abnormal Operations – Dr AS Bahman and Prof. F Iannuzzo (Aalborg University)
Day 1 recording:
Day 2 recording:
Recent Advances on Reliability and Gate Driving of WBG Power Electronics Day 2 (10 downloads) – 2 hours 24 mins – 164MB
For more information on this event hosted by IMAPs UK please visit: Research Showcase – Recent Advances on Reliability and Gate Driving of WBG Power Electronics – Monday 11 and Tuesday 12 January 2021
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